Title: "Effect of pressure on electrical resistance of SnSeRex (x=0.1, 0.2, 0.3, 0.4) (DVT) grown crystals"
         

DOI: 10.15224/ 978-1-63248-075-0-40
Page(s): 13 - 15
Authors: G. K. SOLANKI, PRATIK PATANIYA, TRUPTI PATEL, VIMAL S. JOSHI

Abstract

Rhenium dopped Tin monoselenide crystals have been grown by Direct Vapour Transport (DVT) technique using two zone horizontal furnace by trial and error method. The results of electrical resistance measurements under pressure on single crystals of SnSeRex (x = 0.1, 0.2, 0.3, 0.4) (DVT) are reported. Measurements up to 4GPa are carried out using Bridgman anvil set up. There is no clear indication of any phase transition till the highest pressure is reached in these measurements.