Abstract: “So far, the diameter of a Si wafer has been increased to reduce the manufacturing cost of semiconductor chips. However, it is considered that this makes it difficult to form uniform thickness thin films on the entire surface of the wafer by a conventional film forming method. Therefore, we have proposed an oxidation method using chemical solution that can form a film just by immersing it in a chemical solution. In this study, HfO2, a high-k material with a high dielectric constant, was formed on a Si substrate by chemical solution oxidation, and its electrical properties were compared with those of a thermal oxidation method. As a result, the MOS structure was successfully fabricated by oxidation method using chemical solution. However, this method has a problem of improving interface characteristics.”

Keywords: Si, HfO2 , chemical solution oxidation method, MOSFET.